r07ds0331ej0100 rev.1.00 page 1 of 6 apr 28, 2011 preliminary datasheet bcr4as-16lh triac medium power use features ? i t (rms) : 4 a ? v drm : 800 v ? i fgti , i rgti , i rgt iii : 35 ma or 10ma(i gt item:1) ? high commutation ? the product guaranteed maximum junction temperature 150 c ? non-insulated type ? planar type outline 2, 4 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal 4. t 2 terminal renesas package code: prss0004zg-a ( package name : mp-3a) 1 3 4 2 applications switching mode power supply, small motor control, heater control, and other general purpose ac power control applications maximum ratings voltage class parameter symbol 16 unit repetitive peak off-state voltage note1 v drm 800 v non-repetitive peak off-state voltage note1 v dsm 960 v notes: 1. gate open. parameter symbol ratings unit conditions rms on-state current i t (rms) 4 a commercial frequency, sine full wave 360 conduction, tc = 129 c note3 surge on-state current i tsm 30 a 60 hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 3.7 a 2 s value corresponding to 1 cycle of half wave 60 hz, surge on-state current peak gate power dissipation p gm 3 w average gate power dissipation p g (av) 0.3 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +150 c storage temperature tstg ?40 to +150 c mass ? 0.32 g typical value r07ds0331ej0100 rev.1.00 apr 28, 2011
bcr4as-16lh preliminary r07ds0331ej0100 rev.1.00 page 2 of 6 apr 28, 2011 electrical characteristics parameter symbol bcr4as-16lh-1 (i gt item : 1) bcr4as-16lh unit test conditions min. typ. max. min. typ. max. repetitive peak off-state current i drm ? ? 2.0 ? ? 2.0 ma tj = 150 c v drm applied on-state voltage v tm ? ? 1.6 ? ? 1.6 v tc = 25 c, i tm = 6 a instantaneous measurement v fgt ? ? 1.5 ? ? 1.5 v ? v rgt ? ? 1.5 ? ? 1.5 v gate trigger voltage note2 ?? v rgt ?? ? ? 1.5 ? ? 1.5 v tj = 25 c, v d = 6 v r l = 6 , r g = 330 i fgt ? ? 10 ? ? 35 ma ? i rgt ? ? 10 ? ? 35 ma gate trigger curent note2 ?? i rgt ?? ? ? 10 ? ? 35 ma tj = 25 c, v d = 6 v r l = 6 , r g = 330 gate non-trigger voltage v gd 0.2 ? ? 0.2 ? ? v tj = 125 c v d = 1/2 v drm 0.1 ? ? 0.1 ? ? v tj = 150 c v d = 1/2 v drm thermal resistance r th (j-c) ? ? 3.8 ? ? 3.8 c/w junction to case note3 critical-rate of decay of on-state commutating current note4 (di/dt)c 2.5 ? ? ? ? ? a/ms tj = 125 c (dv/dt)c < 10 v/ s ? ? ? 3.0 ? ? a/ms tj = 125 c (dv/dt)c < 100 v/ s notes: 2. measurement using the gate tr igger characteristics measurement circuit. 3. case temperature is measured on the t 2 tab. 4. test conditions of the critical-ra te of decay of on-state commutating cu rrent is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. peak off-state voltage v d = 400 v 2. rate of rise of off-state commutating voltage (dv/dt)c < 10 v/ s (i gt item : 1) (dv/dt)c < 100 v/ s supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr4as-16lh preliminary r07ds0331ej0100 rev.1.00 page 3 of 6 apr 28, 2011 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) surge on-state current (a) rated surge on-state current conduction time (cycles at 60hz) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 10 1 10 0 10 ? 1 10 2 0 1.6 2.4 4.0 3.2 0.8 4.0 0.5 1.5 2.5 3.5 1.0 2.0 3.0 10 2 10 1 10 0 10 ? 1 tj = 25c 40 0 5 10 15 20 25 35 30 10 0 10 1 10 2 gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) 10 3 10 2 10 1 ?40 0 40 80 120 160 typical example i rgt iii i fgt i i rgt i 10 ? 1 10 0 10 1 10 2 10 1 10 2 10 3 10 4 p gm = 3w i gm = 2a v d = 6v r l = 6 v gm = 10v v gt = 1.5v i gt = 35ma i gt item1 = 10ma v gd = 0.1v p g(av) = 0.3w 10 3 10 2 10 1 ?40 0 40 80 120 160 typical example v d = 6v r l = 6
bcr4as-16lh preliminary r07ds0331ej0100 rev.1.00 page 4 of 6 apr 28, 2011 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) 0 2 1 4 3 6 5 7 01234 7 5 6 10 3 10 2 10 1 ?40 0 40 80 120 160 ?40 0 40 80 120 160 10 6 10 2 10 5 10 4 10 3 360 conduction resistive, inductive loads 01234 6 5 0 20 40 80 60 100 120 140 160 curves apply regardless of conduction angle 360 conduction resistive, inductive loads typical example typical example breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 0 20 40 80 60 100 120 140 160 ?40 0 40 80 120 160 ?40 0 40 80 120 160 t 2 + , g ? typical example t 2 + , g + typical example t 2 ? , g ? typical example distribution typical example 10 3 10 1 10 2 10 0
bcr4as-16lh preliminary r07ds0331ej0100 rev.1.00 page 5 of 6 apr 28, 2011 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=125c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=150c) commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) commutation characteristics (tj=150c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) 10 2 10 3 10 1 10 4 10 2 10 3 10 1 10 4 0 20 40 80 60 100 120 160 10 1 10 0 10 2 10 1 10 0 10 2 10 0 10 1 10 2 10 0 10 1 10 2 140 typical example tj = 125c iii quadrant i quadrant minimum value (i gt item1) 0 20 40 80 60 100 120 160 140 typical example tj = 150c iii quadrant i quadrant typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz main voltage main current i t (di/dt)c v d time time (dv/dt)c iii quadrant i quadrant minimum value typical example tj = 150c i t = 4a = 500 s v d = 200v f = 3hz main voltage main current i t (di/dt)c v d time time (dv/dt)c iii quadrant i quadrant c 1 = 0.1 to 0.47 f r 1 = 47 to 100 c 0 = 0.1 f r 0 = 100 gate trigger characteristics test circuits recommended circuit values around the triac test procedure i test procedure iii test procedure ii 330 330 330 c 1 c 0 r 0 r 1 6 6 6v 6v a v a v 6 6v a v load
bcr4as-16lh preliminary r07ds0331ej0100 rev.1.00 page 6 of 6 apr 28, 2011 package dimensions sc-63 0.32g mass[typ.] tmp3 prss0004zg-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0.2 0.1 0.1 0.5 0.2 0.76 0.76 0.2 2.3 0.2 5.3 0.2 6.6 1.4 0.2 6.1 0.2 1 0.2 2.3 2.5min 2.3 1 package name mp-3a ordering information orderable part number packing quantity remark bcr4as-16lh#b00 tube 75 pcs. bcr4as-16lh-1#b00 tube 75 pcs. igt item1 bcr4as-16lh-t13#b00 embossed tape 3000 pcs. taping direction ?t1? bcr4as-16lh-1t13#b00 embossed tape 3000 pcs. taping direction ?t1?, igt item1 note: please confirm the specificati on about the shipping in detail.
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